Two-dimensional (2D) ferroelectric materials hold great promise for revolutionizing non-volatile memory technologies and enabling the next generation of artificial intelligence hardware. α-In₂Se₃(2H), as a typical 2D ferroelectric material, is highly propitious to abundant functions of information devices due to its special inter-layer in-plane ferroelectric polarization. However, it is very difficult to prepare the 2D α-In₂Se₃(2H) excepting the mechanical stripping, and the multifunctional devices based on ferroelectric polarization of α-In₂Se₃(2H) have not been absolutely explored. Here, the α-In₂Se₃(2H) nanoflakes were grown first at 750 °C via a single physical vapor deposition (PVD). Then, the non-volatile memory and synaptic simulations are realized in α-In₂Se₃(2H) planar device by controlling ferroelectric polarization reversal. High and low resistance states are demonstrated to be inter-convertible in planar devices with excellent endurance, retention performances, and gate tunability. Furthermore, the essential synaptic behaviors are successfully simulated in this device. These results suggest that α-In₂Se₃(2H) is a promising candidate for novel ferroelectric memory, neuromorphic computing devices, and multifunctional artificial intelligence devices.

中文翻译：

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基于 2D α-In2Se3（2H） 铁电的非易失性存储器和人工突触

二维 （2D） 铁电材料在彻底改变非易失性存储器技术和实现下一代人工智能硬件方面前景广阔。α-In ₂ Se ₃ （2H） 作为一种典型的二维铁电材料，由于其特殊的层间面内铁电极化，非常有利于信息器件的丰富功能。然而，除了机械剥离外，制备二维 α-In ₂ Se ₃ （2H） 非常困难，并且基于 α-In ₂ Se ₃ （2H） 铁电极化的多功能器件尚未得到绝对探索。在这里，α-In ₂ Se ₃ （2H） 纳米片首先在 750 °C 下通过单一物理气相沉积 （PVD） 生长。然后，通过控制铁电极化反转，在 α-In ₂ Se ₃ （2H） 平面器件中实现非易失性存储器和突触模拟。事实证明，高电阻和低电阻状态在平面器件中是可相互转换的，具有出色的耐用性、保持性能和栅极可调谐性。此外，在该设备中成功模拟了基本的突触行为。这些结果表明，α-In ₂ Se ₃ （2H） 是新型铁电存储器、神经形态计算设备和多功能人工智能设备的有前途的候选者。