The effects of chemical treatment and aging of BiySb2−yTe3−xSex 3D topological insulator (TI) thin films on the surface electronic structure, morphology, and transport properties have been studied. The surface conditions significantly affect the separation between the Dirac point (DP) and the Fermi level, which is evident in both photoemission and magnetotransport measurements and is explained by the

The use of NbOX2 oxyhalide (X = Cl, Br, I) nanoribbons and nanosheets in next-generation nanoelectronic devices remains unfulfilled because the impact of the fundamental electronic properties of these materials on their practical device applications remains poorly understood. The present work applies first-principles density functional theory calculations to investigate the anisotropic electronic properties

In this study, we investigated the formation of brookite-phase vanadium (IV) oxide (VO2) thin films, focusing on their potential application in bolometric membranes without semiconductor-to-metal transition (SMT) behavior. Using atomic layer deposition (ALD), we controlled the crystallization of VO2 thin films by varying the deposition temperature from 140 to 250 °C. X-ray diffraction (XRD) and x-ray

Atomic layer deposition (ALD) is an excellent growth technique to achieve high-quality, high-uniformity, and highly conformal films with precise growth control at low (<400 °C) substrate temperatures. In this work, ALD was used to deposit low-resistance GaN layers on nitrogen-polar (N-polar) semi-insulating (S.I.) GaN substrates at 300 °C; film conductivity was significantly increased by adding a Si-precursor

This study investigates the generation of a large complete momentum gap (k-gap) in the Lorentzian media with a plasma frequency varying periodically in time. By using the energy expression for the Lorentz model, Maxwell's equations are reformulated as a time-dependent Hamiltonian, allowing an analytical solution of the Floquet band structure. Our simulations reveal a large complete k-gap whose width

In this work, we demonstrate the semipolar (11 2¯ 2) AlN/AlGaN Schottky barrier diodes (SBDs) on m-plane sapphire by metal organic chemical vapor deposition. Owing to the combination of high quality ultra-wide bandgap aluminum nitride (AlN) as the drift layer and AlGaN as the current spreading layer, the quasi-vertical (11 2¯ 2) AlN/AlGaN SBDs exhibit impressive characteristics with a low room temperature

We present a comprehensive study of three-dimensional arrays of nanostructured Co3Fe tetrapods consisting of four pillars each with tetrahedral symmetry, prepared by focused electron beam-induced deposition and placed in two distinct orientations with respect to the direction of an external magnetic field. Using ultra-sensitive micro-Hall magnetometry, we obtain angular-dependent magnetic stray field

Coherent beam combining (CBC) has offered an unparalleled approach in achieving high-capacity and high-bandwidth free-space optical (FSO) communication due to its versatile integration functionality and advanced synthetic ability. However, the existing CBC technologies focus primarily on the phase engineering, where crosstalk between different modes is easily involved, thus leading to nontrivial crosstalk

Particle resuspension is a common phenomenon in nature and industries but not fully understood yet. In this work, we report direct experimental evidence for turbulence-induced resonance of wall-adhered particles before detachment. The recorded frequency is one or two orders of magnitude lower than that normally predicted by the Rock n' Roll model. The frequency ratio ϕ, between the natural frequency

We demonstrate wafer-scale fabrication of temperature-compensated alkali vapor cells using a mixture of Ar and N2 buffer gases. The temperature coefficient of the fractional frequency shift of the hyperfine clock resonance is reduced from a typical value of ≈30×10−9/ K for cells containing pure N2 to below ≈3×10−9/ K for the buffer gas mixture. This result is an important step toward the mass production

Diamond, with its ultra-wide bandgap energy, has emerged as an extreme semiconductor due to its extraordinary electronic and thermal properties. The hydrogen-terminated diamond surface has attracted extensive attention due to its unique p-type surface conductivity. However, the fundamental nature of this p-type conductivity remains incompletely understood using existing surface analysis techniques

As integrated circuits continue to scale down, the search for alternative metals is becoming increasingly important due to the rising resistivity of traditional copper-based interconnects. A layered oxide PdCoO2 is one of the candidate materials for interconnects, having bulk ab-plane conductivity exceeding that of elemental Al. Despite its potential, wafer-scale vacuum deposition of PdCoO2, crucial

As a topological phase with chiral edge states in the absence of a magnetic field, quantum anomalous Hall (QAH) insulators have become a booming topic in low-power-consumption electronic devices, and two-dimensional ferromagnetic compounds provide a platform for designing QAH insulators. Here, a family of ternary transition metal chalcogenide, Mn2XSe4 (X = Al, Ga, In) monolayers, are proposed to be

Low energy consumption nanolasers are crucial for advancing on-chip integrated optical interconnects and photonic integrated circuits. Monolayer transition metal dichalcogenides (TMDs) have emerged as an energy-efficient alternative to traditional semiconductor materials for nanolaser optical gain medium, promising ultralow lasing threshold powers. While several studies suggest that TMDs meet the criteria

In epitaxially grown spinel thin films, the anti-phase boundaries (APBs) are formed due to cationic rearrangements within the spinels on the lattice-mismatched substrates. We demonstrate that such an APB formation could significantly influence the magnetocaloric effect (MCE) and suggest a model on how to avoid their formation and detrimental effects on MCE. We fabricate the geometrically frustrated

The process of suspending two-dimensional materials over cavities etched in a substrate occasionally results in crumpled membranes. Their complicated morphologies feature an abundance of folds, creases, and wrinkles that make each crumpled membrane unique. Here, we prepare five nanomechanical resonators based on crumpled membranes of few-layer graphene and measure their static response and the resonant

Antiferromagnets hold promise for ultrafast coherent switching of magnetic order. This study uses atomistic-level dynamic simulations to investigate the ultrafast spin dynamics of Mn2Au under current pulses, incorporating the effects of polarized spin-current attenuation across Mn layers. Stable, coherent spin precession is achieved above a critical current density, with terahertz frequencies that

All-solution processed inverted quantum dot light-emitting diodes (QLEDs) have shown great promise for applications in lighting and display technologies. However, the practical deployment of eco-friendly blue inverted QLEDs remains a significant challenge, particularly in enhancing their luminous efficiency and operational stability. Herein, we report an eco-friendly, all-solution processed inverted

Van der Waals (vdW) magnetic tunnel junctions (MTJs), with a two-dimensional (2D) material barrier between two vdW ferromagnetic electrodes, present unprecedented opportunities to design innovative spintronic devices. In this study, we employ density functional theory and non-equilibrium Green's function methods to investigate the spin-dependent electronic transport properties of a vdW MTJ, Fe3GaTe2/InSe/Fe3GaTe2

The parasitic hole loss during injection is experimentally unveiled in AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), which is attributed to electron accumulation at the interface of active region and electron blocking layer. It is demonstrated that the loss arises mainly through the non-radiative recombination process, making it unnoticeable under normal operating conditions, e.g.

The van der Waals layered compound SnSb2Te4 has attracted intense attention as a promising thermoelectric material, yet its thin-film thermoelectric performance remains unexplored. In this study, we report the growth and thermoelectric properties of c-axis oriented SnSb2Te4 thin films using pulsed laser deposition technology. Systematic transport measurements revealed the strong correlation between

We report on the fabrication of high-quality Yb3+ and Er3+ co-doped HfO2 epitaxial films using pulsed laser deposition. The host material HfO2 has relatively low phonon energy, which is desirable to inhibit the nonradiative relaxation. The dopant Yb3+ is used to stabilize the ferroelectric o-phase and also acts as the sensitizer to enhance the optical absorption cross section, while Er3+ is the luminescence

Transition metal catalysts have promising applications as potential alternatives to platinum-based catalysts in oxygen reduction reactions (ORR), and fine-tuning their local electronic structure is an essential strategy to boost the intrinsic activity. Herein, a Zr–Cu heterojunction catalyst was synthesized by combining ZrO2/C and Cu2(OH)2CO3/C using a simple sol-gel synthesis method. The Zr–Cu heterojunction

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative

p-type PbTe is long recognized as an outstanding thermoelectric material in the moderate temperature range, while its n-type counterpart shows relatively poor performance. To address this issue and enhance the thermoelectric properties of n-type PbTe, indium (In) was selected as the dopant to synthesize a series of Pb1−xInxTe (0.03 ≤ x ≤ 0.038) compounds, aiming to regulate the electron concentration

High-precision small-angle measurement holds critical significance in advanced manufacturing and scientific research. Optical methods are highly favored for their non-contact characteristic, high accuracy, and exceptional sensitivity, yet traditional optical methods have limitations in measurement range and resolution. Since frequency is the most precise physical quantity, the resolution of angle measurement

Magnetic bias has been thoroughly explored during recent decades. The off-center shift of the hysteresis loop is usually achieved through exchange or dipolar interactions. However, the recently identified Dzyaloshinskii-Moriya Bias (DMB) offers an alternative to dipolar and exchange bias. A key advantage of DMB is its occurrence in a single uniform physical component, without the need for multiple

As a typical nonlinear device, Josephson junction (JJ) can be either served as a microwave device to scatter the traveling microwave or embedded in a transmission line (TL) resonator to modify the mode structure. However, two mutually exclusive circuit models have been proposed to describe the JJ embedded in a TL: one is the series embed model [see, e.g., Zueco et al., Phys. Rev. B 86, 024503 (2012)]

In this review, we address the optical signatures of defects in two-dimensional transition metal dichalcogenides (2D TMDs), whether they occur unintentionally during growth or are deliberately introduced post-growth. We detail their primary responses as probed by photoluminescence (PL), magneto-PL, Raman, tip-enhanced PL and Raman, and nonlinear spectroscopies. Defects significantly impact the electronic

Developments in communication technologies depend on the parallel progress in materials innovation, data processing devices, and their strategic integration. Terahertz (THz) science and technology is the latest field to witness phenomenal growth in 6G communication and quantum materials devices. Such advancements depend on the ability to control both the amplitude and phase-shift of THz radiation,

The unconventional spin-valley states in the collinear-antiferromagnetic (AFM) Janus Re2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) monolayers are predicted using effective k · p and tight binding models, which are few reports on two-dimensional AFM systems. The Janus Re2X3Y3 systems with built-in electric fields along the axis of rotation do not lack PT symmetry. Considering spin–orbit coupling, non-highly spin

Ultrawide bandgap semiconductors are promising for the next-generation power electronics, largely attributed to their substantial bandgap and exceptional breakdown electric field. Rutile GeO2 (r-GeO2) emerges as a promising alternative, particularly because of its ambipolar dopability. However, research on r-GeO2 is still in its infancy, and further investigation into its structural properties is essential

In the past decades, great efforts have been devoted to designing and developing high-efficiency thermoelectric (TE) materials due to the increasing demands in the fields of power generation, cooling, and sensing. Given that the developments of TE materials based on charge and phonon engineering are facing a plateau, the manipulation of spin degree of freedom has been considered as an innovative strategy

Recent advances in artificial intelligence have heightened interest in biomimetic sensory systems that can replicate biological neural processes, particularly learning, memory formation, and cognitive behaviors. In this study, a transparent multifunctional memristor with both volatile and nonvolatile properties is developed using amorphous InAlZnO (a-IAZO). The device's ability to transition between

Silicon integration of non-silicon semiconductors is always challenging due to the serious lattice and thermal expansion mismatch. In this study, we design a silicon-based van der Waals heteroepitaxy of infrared semiconductors through the graphene buffer layer. Through density functional theory calculations, we demonstrate that graphene-modified SiO2 surfaces exhibit a drastic reduction in surface

Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we demonstrate the tunability and quality of random number distributions generated by pMTJs operating at a frequency of 104 MHz. First, changing the pulse amplitude is used

Engineering of interfacial thermal transport is crucial for efficient heat-to-electricity conversion and cooling of electronic devices. Here, we achieve remarkably high interfacial thermal conductance in a series of aluminum/silicon heterostructures grown by molecular beam epitaxy, up to 0.49 GW m−2 K−1 at room temperature, which is ∼29% greater than state-of-the-art values. The pristine interface

Opto-magnetic response of magnetic nanoparticles (MNPs) has been investigated as a means for rapid and sensitive biomolecule detection. However, current studies primarily focus on the linear opto-magnetic response of MNPs. In this study, we explore the nonlinear opto-magnetic response of MNPs induced in a sufficiently strong alternating-current (AC) magnetic field (≥3 mT) and under laser light, referred

This paper proposes a high-efficiency linear to circular (LTC) polarization conversion metamaterial based on a multi-mode electromagnetically induced transparency-like (EIT-like) effect in the microwave band. The EIT-like transmission windows of bright-bright (B-B) and bright-dark (B-D) modes are constructed by generating multi-path excitation through an asymmetric structure. Then, the frequency shift

All-optical switching (AOS) involves manipulating magnetization using only a pulsed laser, presenting a promising approach for next-generation magnetic recording devices. NiCo2O4 (NCO) thin films, a rare-earth-free ferrimagnetic oxide, exhibit a high Curie temperature and strong perpendicular magnetic anisotropy. This study demonstrates AOS in NCO thin films at room temperature using long-duration

We report the attainment of millimeter-thick neutron detectors fabricated from quasi-bulk hexagonal boron nitride (h-BN) produced by halide vapor phase epitaxy (HVPE). Detection efficiencies of 0.7% and 0.5% in response to neutrons emitted from bare AmBe and Cf-252 sources, respectively, have been achieved, corresponding to a charge collection efficiency of about 38%. These results mark a significant

Because of their unique crystal structure and peculiar physical properties, RECrGe3 (RE = La, Ce, Pr, Nd, and Sm) have attracted considerable research attention. Different to most of RECrGe3 crystals, usually showing a single phase transition, NdCrGe3 undergoes two distinct types of magnetic transitions from paramagnetic state to ferromagnetic (FM) and then to antiferromagnetic (AFM) state with lowering

This study demonstrates the high-temperature operation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) based on nickel oxide (NiOx) as an intermediate gate oxide, achieving stable performance up to 400 °C. Compared to the control sample with only an SiNx gate dielectric, the proposed device exhibited significant improvements: (1) enhanced thermally induced

The recent discovery of highly conducting two-dimensional hole gases (2DHGs) in GaN/AlN heterojunctions has opened the door to efficient complementary GaN electronics, a long-standing challenge in wide-bandgap semiconductor device physics. Electrical transport studies and simulations indicate that both heavy- and light-hole valence bands are occupied in these 2DHGs, but direct experimental characterization

Acoustically driven magnetoelectric (ME) antennas present a promising approach for achieving orders-of-magnitude miniaturization. However, conventional resonator-based ME antennas suffer from substantial acoustic energy leakage, which limits the effective utilization of the magneto-acoustic coupling effect in the magnetostrictive (MS) film. In this work, we propose and experimentally demonstrate a

In this work, an inversion-sensing SiO2-based capacitive synapse device was introduced by using the lateral coupling effect in a concentric metal–oxide–semiconductor structure. The device achieved a CHCS/CLCS ratio of 24 with a low programming voltage of VPGM = −2.5 V. Technology Computer Aided Design (TCAD) simulations confirmed the device's high sensitivity to changes in external charges. For oxide

Emergent orbital torque (OT) from the orbital Hall effect of light metals has significant potential for electrical control of magnetization. In this study, the electric manipulation of a most basic spintronic nanostructure, the pseudo-spin-valve (PSV) CoFeB/Cu/CoFeB, is demonstrated with the Cu spacer acting as an effective orbital current source. In the absence of an external magnetic field, the bottom

The layered ferrimagnet Mn3Si2Te6 has emerged as a paradigm-breaking system combining topological nodal-line band and record-breaking colossal magnetoresistance effect (CMR). Here, we report the doping effects of magnetism and electrical transport properties in Mn3-xCrxSi2Te6. We find the Curie temperature Tc is significantly suppressed from 78 K for undoped sample to 57 K for x = 0.6 sample, and the

Planar perovskite solar cells face a fundamental compromise between optical management and electronic optimization in conventional electron transport layers (ETLs). Here, we propose an approach through dielectric engineering by embedding high dielectric constant (εr = 8.5) ZnO nanoparticles within SnO2 ETLs to create a bifunctional nanocomposite that simultaneously harnesses Mie resonance-enhanced